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UGSP15D N5821 15000 BD778 R2080 0441041 UZZ7000T 01400
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  to ? 92 1.emitter 2.collect or 3.base jiangsu changjiang elec tron ics technology co., ltd to -92 plastic-encapsulate transistors KTC3194 transistor (npn) fea tures z general purpose switching application maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c = 0.1ma ,i e =0 40 v collecto r-emitter breakdown voltage v (br) ce o i c =1ma,i b =0 30 v emitter-ba se breakdown voltage v (br )ebo i e =0.1ma,i c =0 4 v collecto r cut-off current i cbo v cb =40v ,i e =0 0.5 a emitter cut-off current i ebo v eb =4v ,i c =0 0.5 a dc curr ent gain h fe v ce =6v , i c =1ma 40 200 collecto r-emitter saturation voltage v ce(sa t) i c =15ma,i b =1. 5ma 0.2 v tran sition frequency f t v ce =6v ,i c =1ma 550 mhz classification of h fe ran k r o y ran ge 40-80 70-140 100-200 sy mbo parameter value unit v cbo collector-bas e voltage 40 v v ceo collector-emitter v oltage 30 v v ebo emitter-base vo ltage 4 v i c collector curr ent 0.02 a p c collector po wer dissipation 0.625 w r ja thermal resist ance from junction to ambient 200 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 c, dec ,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com c , dec ,2015
to-92 7 dshdqg5hho zzzfmhohffrp 3  c,dec,2015


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